Invention Grant
US08570760B2 Serial advanced technology attachment dual in-line memory module device assembly
失效
串行高级技术附件双列直插式内存模块装置装配
- Patent Title: Serial advanced technology attachment dual in-line memory module device assembly
- Patent Title (中): 串行高级技术附件双列直插式内存模块装置装配
-
Application No.: US13192362Application Date: 2011-07-27
-
Publication No.: US08570760B2Publication Date: 2013-10-29
- Inventor: Guo-Yi Chen
- Applicant: Guo-Yi Chen
- Applicant Address: CN Shenzhen TW New Taipei
- Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Shenzhen TW New Taipei
- Agency: Altis & Wispro Law Group, Inc.
- Priority: CN201110198123 20110715
- Main IPC: G06F1/16
- IPC: G06F1/16

Abstract:
A serial advanced technology attachment dual-in-line memory module (SATA DIMM) device assembly includes an interface, a cable, and a board. An edge connector is set on a bottom edge of the board, and a control chip and a connector are arranged on the board. The connector includes a first shell and a number of first pins. The first pins include signal pins connected to the control chip, and ground pins. The interface includes a second shell and a connecting portion extended from a bottom of the second shell. A number of second pins are arranged on the connecting portion. The cable is extended through a side of the second shell to be connected to the first pins. A distance between a top of the first shell and a top of the board is greater than a height of the second shell.
Public/Granted literature
- US20130016471A1 SERIAL ADVANCED TECHNOLOGY ATTACHMENT DUAL IN-LINE MEMORY MODULE DEVICE ASSEMBLY Public/Granted day:2013-01-17
Information query