Invention Grant
- Patent Title: Semiconductor device and method of controlling the same
- Patent Title (中): 半导体装置及其控制方法
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Application No.: US12914547Application Date: 2010-10-28
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Publication No.: US08570815B2Publication Date: 2013-10-29
- Inventor: Yuji Nakaoka
- Applicant: Yuji Nakaoka
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-250292 20091030
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
When overdriving a first power supply voltage supplied to a sense amplifier, a line for the first power supply voltage and a line for a second power supply voltage which is higher than the first power supply voltage are connected to each other by a first transistor, thereby boosting the first power supply voltage. When the first power supply voltage drops upon activation of the sense amplifier, the line for the first power supply voltage and the line for the second power supply voltage are connected to each other by a second transistor, thereby increasing the current supply capability. The first transistor and the second transistor are fully driven to operate as switches.
Public/Granted literature
- US20110102089A1 SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME Public/Granted day:2011-05-05
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