Invention Grant
US08570819B2 Non-volatile memory array architecture optimized for hi-reliability and commercial markets
有权
为高可靠性和商业市场优化的非易失性存储器阵列架构
- Patent Title: Non-volatile memory array architecture optimized for hi-reliability and commercial markets
- Patent Title (中): 为高可靠性和商业市场优化的非易失性存储器阵列架构
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Application No.: US13416192Application Date: 2012-03-09
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Publication No.: US08570819B2Publication Date: 2013-10-29
- Inventor: John McCollum , Fethi Dhaoui
- Applicant: John McCollum , Fethi Dhaoui
- Applicant Address: US CA San Jose
- Assignee: Actel Corporation
- Current Assignee: Actel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lewis Roca Rothgerber LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/06
Abstract:
A sense amplifier arrangement includes a first sense amplifier having a first input and a second input. A second sense amplifier has a first input and a second input. A switching circuit is configured to selectively couple the first input of the first sense amplifier to a first bit line in the array and the second input of the first sense amplifier to a first bit line in the array to selectively couple the first input of the first sense amplifier to the first bit line in the array, the first input of the second sense amplifier to the second bit line in the array, and the second inputs of the first and second sense amplifiers to a reference voltage.
Public/Granted literature
- US20130235678A1 NON-VOLATILE MEMORY ARRAY ARCHITECTURE OPTIMIZED FOR HI-RELIABILITY AND COMMERCIAL MARKETS Public/Granted day:2013-09-12
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