Invention Grant
US08571081B2 Semiconductor light-emitting device 有权
半导体发光装置

Semiconductor light-emitting device
Abstract:
A first cladding layer is formed above a substrate. An active layer is formed above the first cladding layer. An optical confinement layer is formed above the active layer. A pair of band-like current block layers is formed above the optical confinement layer and opposed to each other through an opening extending in a first direction. A second cladding layer is formed on the current block layers and the optical confinement layer. A contact layer is formed above the second cladding layer. A mesa portion is formed by being sandwiched between a pair of groove portions. The current block layers and the opening are included in the mesa portion, and an end of each current block layer on an opposite side to the opening and a side wall of the mesa portion are spaced apart by a predetermined value or more in a second direction.
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