Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US13473714Application Date: 2012-05-17
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Publication No.: US08571081B2Publication Date: 2013-10-29
- Inventor: Ichiro Masumoto
- Applicant: Ichiro Masumoto
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2011-115623 20110524
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A first cladding layer is formed above a substrate. An active layer is formed above the first cladding layer. An optical confinement layer is formed above the active layer. A pair of band-like current block layers is formed above the optical confinement layer and opposed to each other through an opening extending in a first direction. A second cladding layer is formed on the current block layers and the optical confinement layer. A contact layer is formed above the second cladding layer. A mesa portion is formed by being sandwiched between a pair of groove portions. The current block layers and the opening are included in the mesa portion, and an end of each current block layer on an opposite side to the opening and a side wall of the mesa portion are spaced apart by a predetermined value or more in a second direction.
Public/Granted literature
- US20120300805A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2012-11-29
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