Invention Grant
- Patent Title: Nitride semiconductor laser chip
- Patent Title (中): 氮化物半导体激光芯片
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Application No.: US12785523Application Date: 2010-05-24
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Publication No.: US08571083B2Publication Date: 2013-10-29
- Inventor: Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant: Yoshinobu Kawaguchi , Takeshi Kamikawa
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2009-140083 20090611
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.
Public/Granted literature
- US20100316082A1 NITRIDE SEMICONDUCTOR LASER CHIP Public/Granted day:2010-12-16
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