Invention Grant
- Patent Title: Predicting pattern critical dimensions in a lithographic exposure process
- Patent Title (中): 在光刻曝光过程中预测图案关键尺寸
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Application No.: US13313749Application Date: 2011-12-07
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Publication No.: US08572518B2Publication Date: 2013-10-29
- Inventor: Jacek K. Tyminski , Raluca Popescu
- Applicant: Jacek K. Tyminski , Raluca Popescu
- Applicant Address: US CA Belmont
- Assignee: Nikon Precision Inc.
- Current Assignee: Nikon Precision Inc.
- Current Assignee Address: US CA Belmont
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Andrew M. Calderon
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.
Public/Granted literature
- US20120331427A1 IN-SITU SCANNER EXPOSURE MONITOR Public/Granted day:2012-12-27
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