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US08572518B2 Predicting pattern critical dimensions in a lithographic exposure process 有权
在光刻曝光过程中预测图案关键尺寸

Predicting pattern critical dimensions in a lithographic exposure process
Abstract:
A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.
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