Invention Grant
US08572519B2 Method and apparatus for reducing implant topography reflection effect
有权
减少种植体形貌反射效应的方法和装置
- Patent Title: Method and apparatus for reducing implant topography reflection effect
- Patent Title (中): 减少种植体形貌反射效应的方法和装置
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Application No.: US12758147Application Date: 2010-04-12
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Publication No.: US08572519B2Publication Date: 2013-10-29
- Inventor: Wen Hao Liu , Hsien-Huang Liao , Chi-Cheng Hung , Wen-Chun Huang , Ru-Gun Liu
- Applicant: Wen Hao Liu , Hsien-Huang Liao , Chi-Cheng Hung , Wen-Chun Huang , Ru-Gun Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Embodiments of the present disclosure provide methods and apparatuses for integrated circuits. An exemplary integrated circuit (IC) method includes providing an IC design layout that includes a design feature; determining a dimensional difference between the design feature and a corresponding developed photoresist feature of a photoresist layer; modifying the CD of the design feature to compensate for the difference, thereby generating a modified IC design layout; and making a mask using the modified IC design layout.
Public/Granted literature
- US20110252387A1 METHOD AND APPARATUS FOR REDUCING IMPLANT TOPOGRAPHY REFLECTION EFFECT Public/Granted day:2011-10-13
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