Invention Grant
- Patent Title: Implant with high vapor pressure medium
- Patent Title (中): 植入高蒸气压介质
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Application No.: US12625508Application Date: 2009-11-24
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Publication No.: US08574146B2Publication Date: 2013-11-05
- Inventor: John Gillespie, Jr. , Kevin G. Connors , Ernest G. Schutt , Peter Dayton
- Applicant: John Gillespie, Jr. , Kevin G. Connors , Ernest G. Schutt , Peter Dayton
- Applicant Address: US MA Newton
- Assignee: AttenueX Technologies, Inc.
- Current Assignee: AttenueX Technologies, Inc.
- Current Assignee Address: US MA Newton
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: A61F2/02
- IPC: A61F2/02

Abstract:
An implant for use in a human or animal body can include a flexible housing with an outer wall and having a chamber therein. The implant can have at least one high vapor pressure medium within the chamber. The at one high vapor pressure medium can have a combined vapor pressure equal to or greater than about the average value of the hydrostatic pressure of the implantation site plus the skin tension of the housing minus the gas tension of the dissolved gasses present at the implantation site.
Public/Granted literature
- US20100222802A1 IMPLANT WITH HIGH VAPOR PRESSURE MEDIUM Public/Granted day:2010-09-02
Information query
IPC分类: