Invention Grant
US08574448B2 Plasma generation method, cleaning method, and substrate processing method
有权
等离子体产生方法,清洗方法和基板处理方法
- Patent Title: Plasma generation method, cleaning method, and substrate processing method
- Patent Title (中): 等离子体产生方法,清洗方法和基板处理方法
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Application No.: US12752813Application Date: 2010-04-01
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Publication No.: US08574448B2Publication Date: 2013-11-05
- Inventor: Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
- Applicant: Hiroshi Kannan , Noboru Tamura , Kazuya Dobashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2003-185160 20030627; JP2003-185161 20030627
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F3/00

Abstract:
A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.
Public/Granted literature
- US20100252068A1 Plasma Generation Method, Cleaning Method, and Substrate Processing Method Public/Granted day:2010-10-07
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