Invention Grant
US08574525B2 Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
失效
在III族氮化物晶体的氨热生长过程中，使用含硼化合物，气体和流体
- Patent Title: Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
- Patent Title (中): 在III族氮化物晶体的氨热生长过程中，使用含硼化合物，气体和流体
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Application No.: US13128092Application Date: 2009-11-04
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Publication No.: US08574525B2Publication Date: 2013-11-05
- Inventor: Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
- Applicant: Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- International Application: PCT/US2009/063233 WO 20091104
- International Announcement: WO2010/053960 WO 20100514
- Main IPC: C01B21/06
- IPC: C01B21/06 ; C01B21/072 ; C01B21/064 ; C30B7/00 ; C30B11/00 ; C30B21/02 ; B01J3/04 ; B01D9/00 ; H01B1/06 ; C09K5/00
Abstract:
Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.
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