Invention Grant
- Patent Title: Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
- Patent Title (中): 在基板上生长碳化硅外延层以增加和控制载流子寿命的方法
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Application No.: US12876729Application Date: 2010-09-07
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Publication No.: US08574528B2Publication Date: 2013-11-05
- Inventor: Tangali S. Sudarshan , Amitesh Srivastava
- Applicant: Tangali S. Sudarshan , Amitesh Srivastava
- Applicant Address: US SC Columbia
- Assignee: University of South Carolina
- Current Assignee: University of South Carolina
- Current Assignee Address: US SC Columbia
- Agency: Dority & Manning, P.A.
- Main IPC: C01B31/36
- IPC: C01B31/36 ; C01B33/00 ; C01B21/068 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14 ; H01L29/06 ; H01L31/00 ; H01L21/20 ; H01L21/36 ; H01L21/302
Abstract:
A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.
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