Invention Grant
US08574685B1 Electric field tuning of PbS quantum dots for high efficiency solar cell application
有权
PbS量子点的电场调谐用于高效率太阳能电池应用
- Patent Title: Electric field tuning of PbS quantum dots for high efficiency solar cell application
- Patent Title (中): PbS量子点的电场调谐用于高效率太阳能电池应用
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Application No.: US12862260Application Date: 2010-08-24
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Publication No.: US08574685B1Publication Date: 2013-11-05
- Inventor: Jason Lewis , Xiaomei Jiang
- Applicant: Jason Lewis , Xiaomei Jiang
- Applicant Address: US FL Tampa
- Assignee: University of South Florida
- Current Assignee: University of South Florida
- Current Assignee Address: US FL Tampa
- Agency: Smith & Hopen, P.A.
- Agent Robert J. Varkonyi; Courtney Dunn
- Main IPC: B05D5/12
- IPC: B05D5/12 ; B05D3/00 ; H05C1/00 ; H01L21/00

Abstract:
A thin film and a method of making a thin film. The thin film comprises a patterned substrate, a smooth film of electric field tuned quantum dots solution positioned on the patterned substrate, and a thin layer of metal positioned on the thin film. The method begins by drop-casting a quantum dots solution onto a patterned substrate to create a thin film. While the quantum dots solution is drying, a linearly increasing electric filed is applied. The thin film is then placed in a deposition chamber and a thin layer of metal is deposited onto the thin film. Also included are a method of measuring the photoinduced charge transfer (PCT) rate in a quantum dot nanocomposite film and methods of forming a Shottky barrier on a transparent ITO electrode of a quantum dot film.
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