Invention Grant
- Patent Title: Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
- Patent Title (中): 增加硅锗层中的锗浓度的方法和包括其的半导体器件的方法
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Application No.: US13101659Application Date: 2011-05-05
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Publication No.: US08574981B2Publication Date: 2013-11-05
- Inventor: Stefan Flachowsky , Thilo Scheiper , Peter Javorka , Jan Hoentschel
- Applicant: Stefan Flachowsky , Thilo Scheiper , Peter Javorka , Jan Hoentschel
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming layer of silicon germanium on a P-active region of a semiconducting substrate wherein the layer of silicon germanium has a first concentration of germanium, and performing an oxidation process on the layer of silicon germanium to increase a concentration of germanium in at least a portion of the layer of silicon germanium to a second concentration that is greater than the first concentration of germanium.
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