Invention Grant
US08574983B2 Method for fabricating a DRAM capacitor having increased thermal and chemical stability
有权
制造具有增加的热和化学稳定性的DRAM电容器的方法
- Patent Title: Method for fabricating a DRAM capacitor having increased thermal and chemical stability
- Patent Title (中): 制造具有增加的热和化学稳定性的DRAM电容器的方法
-
Application No.: US13107081Application Date: 2011-05-13
-
Publication No.: US08574983B2Publication Date: 2013-11-05
- Inventor: Karthik Ramani , Wim Deweerd , Hiroyuki Ode
- Applicant: Karthik Ramani , Wim Deweerd , Hiroyuki Ode
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L21/8244 ; H01L21/8234
Abstract:
A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode film. The first electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the first electrode film. A high-k dielectric film is formed over the first electrode film. A second electrode film is formed over the dielectric film. The second electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the second electrode film. The dopants and their distribution are chosen so that the crystal structure of the surface of the electrode is not degraded if the electrode is to be used as a templating structure for subsequent layer formation. Additionally, the dopants and their distribution are chosen so that the work function of the electrodes is not degraded.
Public/Granted literature
- US20120287553A1 METHOD FOR FABRICATING A DRAM CAPACITOR HAVING INCREASED THERMAL AND CHEMICAL STABILITY Public/Granted day:2012-11-15
Information query
IPC分类:
