Methods for depositing high-K dielectrics

Invention Grant

US08574985B2 Methods for depositing high-K dielectrics 有权

Title translation: 沉积高K电介质的方法

Please log in to see more content

Patent Title: Methods for depositing high-K dielectrics
Patent Title (中): 沉积高K电介质的方法
Application No.: US13039819

Application Date: 2011-03-03
Publication No.: US08574985B2

Publication Date: 2013-11-05
Inventor: Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
Applicant: Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
Applicant Address: US CA San Jose JP Tokyo
Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
Current Assignee Address: US CA San Jose JP Tokyo
Main IPC: H01L21/8242
IPC: H01L21/8242

Abstract:

Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.

Abstract(Chinese):

描述了沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种将氧化钛层沉积在暴露的金属上，其中所述氧化钛层包含至少一部分金红石型氧化钛。

Public/Granted literature

US20110151136A1 METHODS FOR DEPOSITING HIGH-K DIELECTRICS Public/Granted day:2011-06-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）