HBT with emitter electrode having planar side walls

Invention Grant

US08574994B1 HBT with emitter electrode having planar side walls 失效

Title translation: 具有发射电极的HBT具有平面侧壁

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Patent Title: HBT with emitter electrode having planar side walls
Patent Title (中): 具有发射电极的HBT具有平面侧壁
Application No.: US12910213

Application Date: 2010-10-22
Publication No.: US08574994B1

Publication Date: 2013-11-05
Inventor: Charles H. Fields
Applicant: Charles H. Fields
Applicant Address: US CA Malibu
Assignee: HRL Laboratories, LLC
Current Assignee: HRL Laboratories, LLC
Current Assignee Address: US CA Malibu
Agency: Ladas & Parry
Main IPC: H01L21/331
IPC: H01L21/331

HBT with emitter electrode having planar side walls

Abstract:

A heterojunction bipolar transistor is formed with an emitter electrode that comprises an emitter epitaxy underlying an emitter metal cap and that has horizontal dimensions that are substantially equal to the emitter metal cap.

Abstract(Chinese):

异质结双极晶体管形成有发射极，该发射极包括在发射极金属帽下方的发射极外延，并且具有基本上等于发射极金属帽的水平尺寸。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/328	....制造双极型器件，例如二极管、晶体管、晶闸管的台阶式工艺
H01L21/33	.....包括3个或更多电极的器件
H01L21/331	......晶体管