Invention Grant
- Patent Title: Lift-off structure for substrate of a photoelectric device and the method thereof
- Patent Title (中): 光电器件基板的剥离结构及其方法
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Application No.: US13273520Application Date: 2011-10-14
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Publication No.: US08575004B2Publication Date: 2013-11-05
- Inventor: Yu-Li Tsai , Chih-Hung Wu , Jei-Li Ho , Chao-Huei Huang , Min-De Yang
- Applicant: Yu-Li Tsai , Chih-Hung Wu , Jei-Li Ho , Chao-Huei Huang , Min-De Yang
- Applicant Address: TW Taoyuan County
- Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
- Current Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
- Current Assignee Address: TW Taoyuan County
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW100115090 20110429
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
The present invention related to a lift-off structure adapted to a substrate having a photoelectric device, the structure comprising: a buffer layer, forming on the substrate; an upper sacrificial layer, forming on the buffer layer; an etch stop layer, forming on the upper sacrificial layer, and the photoelectric device structure forming on the etch stop layer.
Public/Granted literature
- US20120273815A1 LIFT-OFF STRUCTURE FOR SUBSTRATE OF A PHOTOELECTRIC DEVICE AND THE METHOD THEREOF Public/Granted day:2012-11-01
Information query
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