Invention Grant
- Patent Title: Selective electromigration improvement for high current C4s
- Patent Title (中): 高电流C4的选择性电迁移改进
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Application No.: US13073181Application Date: 2011-03-28
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Publication No.: US08575007B2Publication Date: 2013-11-05
- Inventor: Timothy Harrison Daubenspeck , Jeffrey P. Gambino , Christopher David Muzzy , Wolfgang Sauter , Thomas Anthony Wassick
- Applicant: Timothy Harrison Daubenspeck , Jeffrey P. Gambino , Christopher David Muzzy , Wolfgang Sauter , Thomas Anthony Wassick
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Nicholas L. Cadmus; Jason H. Sosa; David Cain
- Main IPC: H01L21/326
- IPC: H01L21/326 ; H01L21/44

Abstract:
The invention includes embodiments of a method for designing a flip chip and the resulting structure. The starting point is a flip chip with a semiconductor substrate, one or more wiring levels, and a plurality of I/O contact pads (last metal pads/bond pads) for receiving and sending electrical current. There is also a plurality of C4 bumps for connecting the I/O contact pads to another substrate. Then it is determined which of the C4s of the plurality of C4 bumps have a level of susceptibility to electromigration damage that meets or exceeds a threshold level of susceptibility, and in response, plating a conductive structure with a high electrical current carrying capacity (such as a copper pillar, copper pedestal, or partial copper pedestal) onto the corresponding I/O contact pads and adding a solder ball to a top portion of the conductive structure. The resulting structure is a flip chip wherein only a select few C4 bumps use enhanced C4s (such as copper pedestals) reducing the chance of defects.
Public/Granted literature
- US20120248604A1 SELECTIVE ELECTROMIGRATION IMPROVEMENT FOR HIGH CURRENT C4S Public/Granted day:2012-10-04
Information query
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