Invention Grant
- Patent Title: Post-fabrication self-aligned initialization of integrated devices
- Patent Title (中): 集成器件的后置自对准初始化
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Application No.: US12873058Application Date: 2010-08-31
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Publication No.: US08575008B2Publication Date: 2013-11-05
- Inventor: Michele M. Franceschini , John P. Karidis
- Applicant: Michele M. Franceschini , John P. Karidis
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Dwayne Nelson
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Creating a localized region of material having a target chemical composition by defining an electrical circuit on a substrate, and depositing on the electrical circuit one or more layers of materials having one or more chemical compositions. An electrical current pulse is applied to the electrical circuit to create a self-aligned localized region having the target chemical composition. Applying the electrical current pulse causes a portion of the one or more layers of materials to be heated, resulting in the target chemical composition.
Public/Granted literature
- US20120049144A1 Post-Fabrication Self-Aligned Initialization of Integrated Devices Public/Granted day:2012-03-01
Information query
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