Invention Grant
US08575014B2 Semiconductor device fabricated using a metal microstructure control process
有权
使用金属微结构控制工艺制造的半导体器件
- Patent Title: Semiconductor device fabricated using a metal microstructure control process
- Patent Title (中): 使用金属微结构控制工艺制造的半导体器件
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Application No.: US13404840Application Date: 2012-02-24
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Publication No.: US08575014B2Publication Date: 2013-11-05
- Inventor: Luigi Colombo , James J. Chambers , Mark R. Visokay
- Applicant: Luigi Colombo , James J. Chambers , Mark R. Visokay
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/22
- IPC: H01L21/22
Abstract:
The invention provides a method for manufacturing a semiconductor device that comprises placing a metallic gate layer over a gate dielectric layer where the metallic gate layer has a crystallographic orientation, and re-orienting the crystallographic orientation of the metallic gate layer by subjecting the metallic gate layer to a hydrogen anneal.
Public/Granted literature
- US20120164820A1 SEMICONDUCTOR DEVICE FABRICATED USING A METAL MICROSTRUCTURE CONTROL PROCESS Public/Granted day:2012-06-28
Information query
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