Invention Grant
- Patent Title: Method of protecting sidewall surfaces of a semiconductor substrate
- Patent Title (中): 保护半导体衬底的侧壁表面的方法
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Application No.: US13288054Application Date: 2011-11-03
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Publication No.: US08575026B2Publication Date: 2013-11-05
- Inventor: Manfred Engelhardt
- Applicant: Manfred Engelhardt
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies AG
- Agent Philip Schlazer
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
One or more embodiments may include a method of making a semiconductor structure, comprising: forming a first opening partially through a semiconductor substrate; forming a first dielectric layer over a sidewall surface of the first opening; and forming a second opening partially through a semiconductor substrate, the second opening being below the first opening.
Public/Granted literature
- US20130115771A1 Method of making semiconductor device Public/Granted day:2013-05-09
Information query
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