Invention Grant
US08575531B2 Image sensor array for back side illumination with global shutter using a junction gate photodiode
有权
用于背面照明的图像传感器阵列,具有使用结栅光电二极管的全局快门
- Patent Title: Image sensor array for back side illumination with global shutter using a junction gate photodiode
- Patent Title (中): 用于背面照明的图像传感器阵列,具有使用结栅光电二极管的全局快门
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Application No.: US13210619Application Date: 2011-08-16
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Publication No.: US08575531B2Publication Date: 2013-11-05
- Inventor: Jaroslav Hynecek , Hirofumi Komori
- Applicant: Jaroslav Hynecek , Hirofumi Komori
- Applicant Address: KY George Town
- Assignee: Aptina Imaging Corporation
- Current Assignee: Aptina Imaging Corporation
- Current Assignee Address: KY George Town
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L31/18

Abstract:
The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.
Public/Granted literature
- US20120273654A1 IMAGE SENSOR ARRAY FOR BACK SIDE ILLUMINATION WITH GLOBAL SHUTTER USING A JUNCTION GATE PHOTODIODE Public/Granted day:2012-11-01
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