Invention Grant
- Patent Title: Structure for discharging extreme ultraviolet mask
- Patent Title (中): 用于放电极紫外线屏蔽的结构
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Application No.: US13112536Application Date: 2011-05-20
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Publication No.: US08575573B2Publication Date: 2013-11-05
- Inventor: You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
- Applicant: You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
- Applicant Address: TW Hsinchu
- Assignee: Hermes Microvision, Inc.
- Current Assignee: Hermes Microvision, Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: A61N5/00
- IPC: A61N5/00
Abstract:
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
Public/Granted literature
- US20120292509A1 STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK Public/Granted day:2012-11-22
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