Invention Grant
- Patent Title: Memristive device
- Patent Title (中): 忆阻器
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Application No.: US13382281Application Date: 2009-07-13
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Publication No.: US08575585B2Publication Date: 2013-11-05
- Inventor: Jianhua Yang , Qiangfei Xia , Alexandre M. Bratkovski
- Applicant: Jianhua Yang , Qiangfei Xia , Alexandre M. Bratkovski
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/050433 WO 20090713
- International Announcement: WO2011/008195 WO 20110120
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L47/00 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/20
Abstract:
A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
Public/Granted literature
- US20120104342A1 Memristive Device Public/Granted day:2012-05-03
Information query
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