Invention Grant
- Patent Title: Storage device and method of manufacturing the same
- Patent Title (中): 存储装置及其制造方法
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Application No.: US13236793Application Date: 2011-09-20
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Publication No.: US08575587B2Publication Date: 2013-11-05
- Inventor: Koji Asakawa , Shigeki Hattori , Hideyuki Nishizawa , Satoshi Mikoshiba , Reika Ichihara , Masaya Terai
- Applicant: Koji Asakawa , Shigeki Hattori , Hideyuki Nishizawa , Satoshi Mikoshiba , Reika Ichihara , Masaya Terai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-049184 20110307
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/06
Abstract:
A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.
Public/Granted literature
- US20120228576A1 STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-09-13
Information query
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