Invention Grant
US08575591B2 Apparatus for forming a nanoscale semiconductor structure on a substrate by applying a carrier fluid
有权
用于通过施加载体流体在衬底上形成纳米级半导体结构的装置
- Patent Title: Apparatus for forming a nanoscale semiconductor structure on a substrate by applying a carrier fluid
- Patent Title (中): 用于通过施加载体流体在衬底上形成纳米级半导体结构的装置
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Application No.: US12598368Application Date: 2008-03-31
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Publication No.: US08575591B2Publication Date: 2013-11-05
- Inventor: Petri Juhani Korpi , Risto Johannes Johannes Rönkkä
- Applicant: Petri Juhani Korpi , Risto Johannes Johannes Rönkkä
- Applicant Address: FI Espoo
- Assignee: Nokia Corporation
- Current Assignee: Nokia Corporation
- Current Assignee Address: FI Espoo
- Agency: Harrington & Smith
- Priority: GB0708381.9 20070430
- International Application: PCT/EP2008/053781 WO 20080331
- International Announcement: WO2008/132000 WO 20081106
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
An apparatus applies a carrier fluid to a semiconductor substrate. The carrier fluid carries nanoparticles. The positions of a plurality of particles in the carrier fluid are manipulated by applying an electric field, removing the carrier fluid from the substrate so as to leave the nanoparticles on the substrate, and sintering the nanoparticles to form a region.
Public/Granted literature
- US20100283032A1 METHOD FOR FORMING A SEMIDCONDUCTOR STRUCTURE Public/Granted day:2010-11-11
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