Invention Grant
- Patent Title: Semiconductor light emitting element having barriers which prevent forward current in a semiconductor film thereof
- Patent Title (中): 具有阻挡其半导体膜中的正向电流的阻挡层的半导体发光元件
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Application No.: US13567202Application Date: 2012-08-06
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Publication No.: US08575627B2Publication Date: 2013-11-05
- Inventor: Takuya Kazama
- Applicant: Takuya Kazama
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2011-173692 20110809
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/161 ; H01L31/12 ; H01L31/153 ; H01L33/00

Abstract:
A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form ohmic contact with the semiconductor film and a second electrode piece electrically connected to the first electrode pieces. The light reflecting layer includes a reflecting electrode, and the reflecting electrode includes third electrode pieces that form ohmic contact with the semiconductor film and a fourth electrode piece electrically connected to the third electrode pieces and placed opposite to the second electrode piece. Both the second electrode piece and the fourth electrode piece form Schottky contact with the semiconductor film so as to form barriers to prevent forward current in the semiconductor film.
Public/Granted literature
- US20130037839A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2013-02-14
Information query
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