Invention Grant
US08575657B2 Direct growth of diamond in backside vias for GaN HEMT devices
有权
用于GaN HEMT器件的背面通孔中的金刚石的直接生长
- Patent Title: Direct growth of diamond in backside vias for GaN HEMT devices
- Patent Title (中): 用于GaN HEMT器件的背面通孔中的金刚石的直接生长
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Application No.: US13425245Application Date: 2012-03-20
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Publication No.: US08575657B2Publication Date: 2013-11-05
- Inventor: Vincent Gambin , Rajinder Sandhu , Benjamin Poust , Michael Wojtowicz
- Applicant: Vincent Gambin , Rajinder Sandhu , Benjamin Poust , Michael Wojtowicz
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Miller IP Group, PLC
- Agent John A. Miller
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/34 ; H01L29/66
Abstract:
A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.
Public/Granted literature
- US20130248879A1 DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES Public/Granted day:2013-09-26
Information query
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