Invention Grant
- Patent Title: High-sensitivity nanoscale wire sensors
- Patent Title (中): 高灵敏度纳米级线传感器
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Application No.: US12312740Application Date: 2007-11-19
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Publication No.: US08575663B2Publication Date: 2013-11-05
- Inventor: Charles M. Lieber , Xuan Gao , Gengfeng Zheng
- Applicant: Charles M. Lieber , Xuan Gao , Gengfeng Zheng
- Applicant Address: US MA Cambridge
- Assignee: President and Fellows of Harvard College
- Current Assignee: President and Fellows of Harvard College
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2007/024126 WO 20071119
- International Announcement: WO2008/127314 WO 20081023
- Main IPC: G01N27/403
- IPC: G01N27/403

Abstract:
The present invention generally relates, in some aspects, to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. Certain embodiments of the invention provide a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross-sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length (lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted, in some cases, by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
Public/Granted literature
- US20100152057A1 HIGH-SENSITIVITY NANOSCALE WIRE SENSORS Public/Granted day:2010-06-17
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