Invention Grant
US08575674B2 Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
有权
铁磁隧道结结构，以及磁阻元件和自旋电子器件，每个使用相同的
- Patent Title: Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
- Patent Title (中): 铁磁隧道结结构，以及磁阻元件和自旋电子器件，每个使用相同的
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Application No.: US13264460Application Date: 2010-04-15
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Publication No.: US08575674B2Publication Date: 2013-11-05
- Inventor: Hiroaki Sukegawa , Koichiro Inomata , Rong Shan , Masaya Kodzuka , Kazuhiro Hono , Takao Furubayashi , Wenhong Wang
- Applicant: Hiroaki Sukegawa , Koichiro Inomata , Rong Shan , Masaya Kodzuka , Kazuhiro Hono , Takao Furubayashi , Wenhong Wang
- Applicant Address: JP Ibaraki
- Assignee: National Institute for Materials Science
- Current Assignee: National Institute for Materials Science
- Current Assignee Address: JP Ibaraki
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2009-099483 20090416
- International Application: PCT/JP2010/056785 WO 20100415
- International Announcement: WO2010/119928 WO 20101021
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.
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