Nonvolatile semiconductor memory device

Invention Grant

US08575679B2 Nonvolatile semiconductor memory device 有权

Title translation: 非易失性半导体存储器件

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Patent Title: Nonvolatile semiconductor memory device
Patent Title (中): 非易失性半导体存储器件
Application No.: US13374281

Application Date: 2011-12-20
Publication No.: US08575679B2

Publication Date: 2013-11-05
Inventor: Hiroaki Takasu
Applicant: Hiroaki Takasu
Applicant Address: JP
Assignee: Seiko Instruments Inc.
Current Assignee: Seiko Instruments Inc.
Current Assignee Address: JP
Agency: Adams & Wilks
Priority: JP2010-294479 20101229; JP2010-294480 20101229; JP2011-254290 20111121
Main IPC: H01L29/788
IPC: H01L29/788

Abstract:

Provided is an electrically erasable and programmable nonvolatile semiconductor memory device having a tunnel region; the tunnel region and the peripheral of the tunnel region are dug down to be made lower, and a depletion electrode, to which an arbitral potential is given to deplete a part of the tunnel region through a depletion electrode insulating film, is arranged in the lowered drain region.

Abstract(Chinese):

提供了具有隧道区域的电可擦除和可编程的非易失性半导体存储器件; 隧道区域和隧道区域的周边被挖掘下来，并且通过耗尽电极绝缘膜将给予仲裁电位以耗尽隧道区域的一部分的耗尽电极布置在下降的漏区。

Public/Granted literature

US20120168844A1 Nonvolatile semiconductor memory device Public/Granted day:2012-07-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的