Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13592910Application Date: 2012-08-23
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Publication No.: US08575721B2Publication Date: 2013-11-05
- Inventor: Ryuichi Okamura
- Applicant: Ryuichi Okamura
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-071089 20060315
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device, which exhibits an increased design flexibility for a capacitor element, and can be manufactured with simple method, is provided. A semiconductor device 100 includes: a silicon substrate 101; an interlayer film 103 provided on the silicon substrate 101; a multiple-layered interconnect embedded in the interlayer film 103; a flip-chip pad 111, provided so as to be opposite to an upper surface of an uppermost layer interconnect 105 in the multiple-layered interconnect and having a solder ball 113 for an external coupling mounted thereon; and a capacitance film 109 provided between said uppermost layer interconnect 105 and the flip-chip pad 111. Such semiconductor device 100 includes the flip-chip pad 111 composed of an uppermost layer interconnect 105, a capacitive film 109 and a capacitor element 110.
Public/Granted literature
- US20130026602A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-31
Information query
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