Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12073489Application Date: 2008-03-06
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Publication No.: US08575726B2Publication Date: 2013-11-05
- Inventor: Yoshinori Murakami
- Applicant: Yoshinori Murakami
- Applicant Address: JP Yokohama-shi
- Assignee: Nissan Motor Co., Ltd.
- Current Assignee: Nissan Motor Co., Ltd.
- Current Assignee Address: JP Yokohama-shi
- Agency: Foley & Lardner LLP
- Priority: JP2007-058505 20070308; JP2007-278693 20071026
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
A semiconductor device includes: a semiconductor chip including: a first main face having an edge portion, a second main face locating the opposite side to the first main face, a crystalline defect region present within a region including at least the edge portion being adjacent to the first main face, the crystalline defect region being configured to have lower stress than the stress in the other semiconductor region for the same strain; and a metallic substrate to be bonded via a bonding member to the first main face of the semiconductor chip.
Public/Granted literature
- US20080217744A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-09-11
Information query
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