Invention Grant
- Patent Title: Direct contact semiconductor package with power transistor
- Patent Title (中): 直接接触半导体封装,带功率晶体管
-
Application No.: US13345467Application Date: 2012-01-06
-
Publication No.: US08575737B2Publication Date: 2013-11-05
- Inventor: Eung San Cho
- Applicant: Eung San Cho
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/34

Abstract:
Some exemplary embodiments of an advanced direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a mold compound enclosing a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached on top of the lead frame portions as a flip chip, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.
Public/Granted literature
- US20120104587A1 Direct Contact Semiconductor Package with Power Transistor Public/Granted day:2012-05-03
Information query
IPC分类: