Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13617483Application Date: 2012-09-14
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Publication No.: US08575740B2Publication Date: 2013-11-05
- Inventor: Yasuyuki Arai , Yuko Tachimura , Yohei Kanno , Mai Akiba
- Applicant: Yasuyuki Arai , Yuko Tachimura , Yohei Kanno , Mai Akiba
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-030369 20040206
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.
Public/Granted literature
- US20130009289A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-10
Information query
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