A semiconductor device according to the present invention is a semiconductor device that includes: a semiconductor substrate having metal wiring formed on a bottom surface of the semiconductor substrate; and a plurality of wiring layers formed above the semiconductor substrate. The wiring layers include a first wiring layer and a second wiring layer that is formed above the first wiring layer. The semiconductor device further includes: a first through electrode which electrically connects the first wiring layer and the metal wiring; a second through electrode which electrically connects the second wiring layer and the metal wiring; and at least one layer difference adjustment film formed between the semiconductor substrate and the wiring layers. The at least one layer difference adjustment film includes a layer difference adjustment film formed on a region excluding a region corresponding to the second through electrode.