Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US12659968Application Date: 2010-03-26
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Publication No.: US08575764B2Publication Date: 2013-11-05
- Inventor: Osamu Miyata , Masaki Kasai , Shingo Higuchi
- Applicant: Osamu Miyata , Masaki Kasai , Shingo Higuchi
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2004-332175 20041116; JP2005-007983 20050114; JP2005-188732 20050628; JP2005-224421 20050802
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.
Public/Granted literature
- US20100187659A1 Semiconductor device and method for manufacturing semiconductor device Public/Granted day:2010-07-29
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