Invention Grant
- Patent Title: Semiconductor device and test method
- Patent Title (中): 半导体器件及测试方法
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Application No.: US12685035Application Date: 2010-01-11
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Publication No.: US08575952B2Publication Date: 2013-11-05
- Inventor: Kenichi Kawasaki
- Applicant: Kenichi Kawasaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2009-6199 20090115
- Main IPC: G01R31/3187
- IPC: G01R31/3187

Abstract:
A semiconductor device includes a first circuit block, a second circuit block, a first lead-out line coupled to the first circuit block, a second lead-out line coupled to the second circuit block, a first pad coupled to the first lead-out line, a second pad coupled to the second lead-out line, and a shielding line provided between the first lead-out line and the second lead-out line.
Public/Granted literature
- US20100176838A1 SEMICONDUCTOR DEVICE AND TEST METHOD Public/Granted day:2010-07-15
Information query
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