Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13285174Application Date: 2011-10-31
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Publication No.: US08575956B2Publication Date: 2013-11-05
- Inventor: Geun-Il Lee
- Applicant: Geun-Il Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0076424 20110801
- Main IPC: H03K19/003
- IPC: H03K19/003

Abstract:
A semiconductor device includes an impedance control signal generation unit configured to generate an impedance control signal for controlling an impedance value, a first processing unit configured to process the impedance control signal in response to a first setup value and generate a first process signal, a first clock termination unit configured to be coupled with a first clock path and determine an impedance value responding to the impedance control signal, and a second clock termination unit configured to be coupled with a second clock path and determine an impedance value responding to the first process signal.
Public/Granted literature
- US20130033288A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-02-07
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