Invention Grant
US08575978B2 Semiconductor device, electronic device, and method of testing the semiconductor device
有权
半导体器件，电子器件以及半导体器件的测试方法
- Patent Title: Semiconductor device, electronic device, and method of testing the semiconductor device
- Patent Title (中): 半导体器件，电子器件以及半导体器件的测试方法
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Application No.: US13462716Application Date: 2012-05-02
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Publication No.: US08575978B2Publication Date: 2013-11-05
- Inventor: Danichi Komatsu , Wataru Tanaka , Satoru Ikeda , Yayoi Nagao
- Applicant: Danichi Komatsu , Wataru Tanaka , Satoru Ikeda , Yayoi Nagao
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-122078 20110531
- Main IPC: H03L7/00
- IPC: H03L7/00
Abstract:
A coupling failure of a supply terminal or a ground terminal is easily detected. A diode is disposed between a supply terminal of a semiconductor device and a first I/O terminal so that the supply terminal is located on a cathode side, and the first I/O terminal is located on an anode side. A determination unit determines whether or not a voltage of the supply terminal is lower than a voltage of the first I/O terminal when a signal of high level equal to a supply voltage is input to the first I/O terminal.
Public/Granted literature
- US20120306540A1 SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD OF TESTING THE SEMICONDUCTOR DEVICE Public/Granted day:2012-12-06
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