Invention Grant
- Patent Title: Level shift circuit
- Patent Title (中): 电平移位电路
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Application No.: US13593010Application Date: 2012-08-23
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Publication No.: US08575987B2Publication Date: 2013-11-05
- Inventor: Kazutaka Kikuchi
- Applicant: Kazutaka Kikuchi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-013099 20100125
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A level shift circuit of the invention includes a CMOS inverter circuit that receives an input pulse signal having a crest value of a first potential, a latch circuit that operates on a power supply of a second potential which is higher than the first potential, and a power supply circuit that supplies a power supply of not less than the first potential and less than the second potential to the CMOS inverter circuit. The latch circuit has one end thereof connected to an output end of the CMOS inverter circuit and outputs from the other end thereof an output pulse signal having a crest value of the second potential and a same phase as the input pulse signal. The power supply circuit functions to limit the power supply when the input pulse signal assumes at least the ground level.
Public/Granted literature
- US20120313686A1 LEVEL SHIFT CIRCUIT Public/Granted day:2012-12-13
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