Invention Grant
- Patent Title: High isolation switch
- Patent Title (中): 高隔离开关
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Application No.: US13545774Application Date: 2012-07-10
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Publication No.: US08575989B1Publication Date: 2013-11-05
- Inventor: Douglas A. Garrity , Chunhe Zhao
- Applicant: Douglas A. Garrity , Chunhe Zhao
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H03K17/00
- IPC: H03K17/00

Abstract:
A switch is provided. The circuit includes a plurality of transistors configured to electrically isolate the input of the switch from the output of the switch. In one embodiment, for example, the plurality of transistors may be configured to provide at least one path between the input and the output of the switch, and to provide at least three layers of electrical isolation between the input and the output of the switch when the switch is open.
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