Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.