Invention Grant
US08575999B2 Constant current circuit and semiconductor integrated circuit 有权
恒流电路和半导体集成电路

  • Patent Title: Constant current circuit and semiconductor integrated circuit
  • Patent Title (中): 恒流电路和半导体集成电路
  • Application No.: US13328884
    Application Date: 2011-12-16
  • Publication No.: US08575999B2
    Publication Date: 2013-11-05
  • Inventor: Sadanori Akiya
  • Applicant: Sadanori Akiya
  • Applicant Address: JP Kawasaki
  • Assignee: Fujitsu Limited
  • Current Assignee: Fujitsu Limited
  • Current Assignee Address: JP Kawasaki
  • Main IPC: G05F1/10
  • IPC: G05F1/10 G05F3/02
Constant current circuit and semiconductor integrated circuit
Abstract:
In a constant current circuit, a drain terminal is connected to an output terminal of a current, and a gate voltage operable in a saturation region is applied to a source-grounded transistor. An increase current generating circuit generates an increase current equivalent to an increase of a current due to a channel length modulation effect of the transistor. A current mirror circuit generates a current having the same value as that of the increase current generated by the increase current generating circuit and supplies the generated current to the drain terminal of the transistor.
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