Invention Grant
- Patent Title: Amplifier with high power supply noise rejection
- Patent Title (中): 具有高电源噪声抑制功能的放大器
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Application No.: US13235285Application Date: 2011-09-16
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Publication No.: US08576011B2Publication Date: 2013-11-05
- Inventor: Vijayakumar Dhanasekaran
- Applicant: Vijayakumar Dhanasekaran
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ramin Mobarhan
- Main IPC: H03F3/21
- IPC: H03F3/21

Abstract:
An amplifier with high power supply rejection is disclosed. In an exemplary implementation, an amplifier includes a first stage configured to receive a signal to be amplified, a second stage comprising an input transistor coupled to the first stage, and further comprising at least one additional transistor, and a voltage regulator configured to received a first supply voltage and generate a regulated supply voltage, the first supply voltage coupled to the at least one additional transistor, the regulated supply voltage coupled to the first stage and the input transistor of the second stage to improve power supply noise rejection of the apparatus.
Public/Granted literature
- US20130002359A1 AMPLIFIER WITH HIGH POWER SUPPLY NOISE REJECTION Public/Granted day:2013-01-03
Information query
IPC分类: