Invention Grant
US08576299B2 Solid-state imaging device with pixels having photodiodes with different exposure times, signal processing method of solid-state imaging device, and electronic apparatus
有权
具有具有不同曝光时间的光电二极管的像素的固态成像装置，固态成像装置的信号处理方法和电子装置
- Patent Title: Solid-state imaging device with pixels having photodiodes with different exposure times, signal processing method of solid-state imaging device, and electronic apparatus
- Patent Title (中): 具有具有不同曝光时间的光电二极管的像素的固态成像装置，固态成像装置的信号处理方法和电子装置
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Application No.: US12731402Application Date: 2010-03-25
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Publication No.: US08576299B2Publication Date: 2013-11-05
- Inventor: Keiji Mabuchi
- Applicant: Keiji Mabuchi
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2009-092854 20090407
- Main IPC: H04N5/235
- IPC: H04N5/235 ; H04N3/14 ; H04N5/335
Abstract:
A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.
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