Invention Grant
- Patent Title: Charge pump electrostatic discharge protection
- Patent Title (中): 电荷泵静电放电保护
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Application No.: US13047683Application Date: 2011-03-14
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Publication No.: US08576523B2Publication Date: 2013-11-05
- Inventor: Ankit Srivastava , Eugene R. Worley , Guoqing Miao , Xiaohong Quan
- Applicant: Ankit Srivastava , Eugene R. Worley , Guoqing Miao , Xiaohong Quan
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ramin Mobarhan
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H1/00 ; H02H1/04 ; H02H3/22

Abstract:
Techniques for electrostatic discharge (ESD) protection for amplifiers and other circuitry employing charge pumps. In an exemplary embodiment, a Vneg switch coupling a second flying capacitor node to a negative output voltage node is closed in response to an ESD event being detected between a supply voltage node and the negative output voltage node. A ground switch coupling a ground node to the second flying capacitor node is closed in response to an ESD event being detected between the ground node and the negative output voltage node. The Vneg switch is further closed in response to the ESD event being detected between the ground node and the negative output voltage node. Further techniques are disclosed for providing on-chip snapback clamps at the output of a power amplifier coupled to the charge pump to protect against ESD events as defined by the standard IEC 61000-4-2.
Public/Granted literature
- US20120236444A1 CHARGE PUMP ELECTROSTATIC DISCHARGE PROTECTION Public/Granted day:2012-09-20
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