Invention Grant
- Patent Title: Content addressable memory
- Patent Title (中): 内容可寻址内存
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Application No.: US13403398Application Date: 2012-02-23
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Publication No.: US08576601B2Publication Date: 2013-11-05
- Inventor: Takao Marukame , Tomoaki Inokuchi , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito , Atsuhiro Kinoshita , Kosuke Tatsumura
- Applicant: Takao Marukame , Tomoaki Inokuchi , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito , Atsuhiro Kinoshita , Kosuke Tatsumura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-038699 20110224
- Main IPC: G11C15/02
- IPC: G11C15/02
Abstract:
One embodiment provides a content addressable memory, including: a pair of spin MOSFETs including: a first spin MOSFET whose magnetization state is set in accordance with stored data; and a second spin MOSFET whose magnetization state is set in accordance with the stored data, the second spin MOSFET being connected in parallel with the first spin MOSFET; a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data; and a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET.
Public/Granted literature
- US20120218802A1 CONTENT ADDRESSABLE MEMORY Public/Granted day:2012-08-30
Information query
