A nonvolatile semiconductor memory device according to an embodiment includes a memory cell array configured by plural memory cells each including a variable resistor and each provided between first and second lines. A control circuit applies to a memory cell through the first and second lines a writing voltage for writing data or a reading voltage for reading data. A sense amplifier circuit senses data retained in a memory cell based on a current flowing through the first line. In a data writing operation, the control circuit applies a writing voltage to each of n number of memory cells configuring one unit such that the memory cells may be supplied with different resistance values. In a data reading operation, the sense amplifier circuit compares level relationship of the resistance values of n number of memory cells configuring one unit and reads out n! patterns of data from the one unit.