Invention Grant
US08576607B1 Hybrid memory cell array and operations thereof 失效
混合存储单元阵列及其操作

  • Patent Title: Hybrid memory cell array and operations thereof
  • Patent Title (中): 混合存储单元阵列及其操作
  • Application No.: US13172702
    Application Date: 2011-06-29
  • Publication No.: US08576607B1
    Publication Date: 2013-11-05
  • Inventor: Farid Nemati
  • Applicant: Farid Nemati
  • Agency: The Webostad Firm
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Hybrid memory cell array and operations thereof
Abstract:
An integrated circuit and methods of operating same are described. In an embodiment of the integrated circuit included is an array of memory cells, where each of the memory cells includes a resistance-change storage element and a thyristor-based storage element coupled in series. In embodiments of the methods included are methods for data transfer, data tracking, and operating a memory array.
Information query
Patent Agency Ranking
0/0